VAN-PHUC NGUYEN; UYEN-NHI TON HOANG; HOANG-VIET LE; MINH-ANH NGUYEN THUY; THANH-TAM LE; VAN-KHOA PHAM. Design, Simulate, and Layout for a Static Random-Access Memory (SRAM) Using a 6T Memory Cell and a Latch-Based Sense Amplifier: VERSION OF RECORD ONLINE: 12/09/2025. Journal of Technical Education Science, [S. l.], 2025. DOI: 10.54644/jte.2025.1533. Disponível em: https://www.jte.edu.vn/index.php/jte/article/view/1533. Acesso em: 7 apr. 2026.