TRUONG, D.-M.; NGUYEN, N.-H.; DO, H.-B. Enhanced-Mode NiO/Beta-Ga2O3 Heterojunction Field-Effect Transistor: A TCAD Study. Journal of Technical Education Science, [S. l.], v. 20, n. 04SI, p. 211–217, 2025. DOI: 10.54644/jte.2025.1665. Disponível em: https://www.jte.edu.vn/index.php/jte/article/view/1665. Acesso em: 7 apr. 2026.