Si nanowires grown by al-catalyzed plasma-enhanced chemical vapor deposition (pecvd) on quartz substrates for solar cell applications

Authors

  • Duc Toan Le Phu Yen University, Vietnam

Corressponding author's email:

toanvatlieu@gmail.com

Keywords:

Silicon, nanowires, Silicon nanowires, solar cells, photovoltaics (PVs)

Abstract

Silicon nanowires have been synthesized on quartz substrates using Al as a catalyst. Silane (SiH4) diluted in H2 carrier gas was employed as Si precursor in a plasma enhanced chemical vapor deposition (PECVD) system operated at 550°C. This growth temperature is lower than the eutectic temperature in the Al – Si system (577°C) which suggests a vapor – solid – solid (VSS) growth mechanism. Electrical measurements and back-gated current-voltage measurements indicated that silicon nanowires were heavily doped (p type), with a doping concentration of a few 1019cm-3. We have measured hole mobility values of ~ 30cm2/V.s. We have also evaluated the use of those highly doped Si nanowires for solar cell applications based on core-shell structure, an efficiency of ~ 2,37% for the best one with fill factor of ~ 48,2%, open circuit voltage of ~ 0.70V and current density of ~ 15,2mA/cm2.

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Published

28-08-2017

How to Cite

[1]
D. T. Le, “Si nanowires grown by al-catalyzed plasma-enhanced chemical vapor deposition (pecvd) on quartz substrates for solar cell applications”, JTE, vol. 12, no. 3, pp. 11–21, Aug. 2017.

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