Some new results in simulation of single electron transistor
Corressponding author's email:
minhlh@hcmute.edu.vnKeywords:
single electron transistor, current-voltage characteristics, Coulomb blockage, Coulomb staircase, Coulomb oscillationAbstract
Single electron transistor (SET) is a key element in current research area of nano-electronics and nano-technology, which can offer nano-feature size, low power consumption, high operating speed and high-density integration. SET is a new nano-scale switching device; it can control the motion of the single electron and its operation is based on the tunneling effect. Research on SET by experiments is a challenge for researchers in current domestic conditions. Meanwhile, simulation is a research method which can achieve reliable results and feasible. Simulated results can be used to orient for manufacture and experiment. The goal of this work is to discuss briefly about physics of the SET and focuses on simulation of basic quantum device characteristics like tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Model of SETs based on one-energy level (metallic) and multi-energy level (semiconducting) has been proposed. Two types of metallic and semiconducting SETs have been simulated.
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