Nemo-VN2-2019 an useful simulation tool for emerging nanoelectronic devices

Abstract

In recent years, the period of traditional CMOS, it may be possible to continue functional scaling by integrating alternative electronic devices) onto a silicon platform . These alternative electronic devices include resonant tunneling diode, single electron transistor, molecular field effect transistor, carbon nanotube field effect transistor, spin field effect transistor (spin FET), and graphene field effect transistor (graphene FET). We have developed NEMO-VN2-2019, a quantum device modeling tool that simulates emerging nanoelectronic devices. These devices include the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, spin field effect transistor, graphene field effect transistor. The non-equilibrium Green’s function method is used to perform a comprehensive study of emerging nanoelectronic devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2-2019 uses Matlab to solve the Schrodinger equation to get current-voltage characteristics of quantum devices. In this work, we provide a short overview of the theoretical methodology using non-equilibrium Green’s function method for modeling of the nanoscale devices, their simulations and updated information of NEMO-VN2-2019.