Simulation of Single Electron Transistor in Multi-Level Mode Using Non-Equilibrium Green Function Method
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trunghh@hcmute.edu.vnKeywords:
transistor, non-equilibrium Green functionAbstract
Single electron transistor (SET) is a key element in our research field where device operation is based on one-by-one electron through the channel utilizing the Coulomb blockade effect. In this paper, we provide an overview of research developments of SET. This is achieved in this model by using Non-Equilibrium Green Function (NEGF) method to compute transport function, Coulomb oscillation, and ultimately the current-voltage characteristics. The simulation program is written by using graphic user guide (GUI) in MatLab. The effects of capacitance, bias, and temperature on current-voltage characteristics of SET are also presented.
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References
K. Uchida, R. Matsuzawa, J. Koga, R. Ohba, S. Takagi and A. Toriumi, Jpn. J. Appl.Phys. 3, 4B, p. 2321-2324 (2000).
S. Mahapatra, A. M. Ionescu and K.Banerjee, IEEE Electron Device Lett., 23,p.366-368 (2002).
C. Wasshuber, Computational Electronics, Springer-Verlag, New York, 2002.
R. H. Chen, A. N. Karotkov, and K. K.Likharev, Proceedings of Device Res. Conf.1995, p. 44-45.
Y. S. Yu et al., Proceedings of Asia Pacific Workshop: Fundamental Application Advanced Semiconductor Device, 2000, p.85-90.
K. K. Likharev, SETTRAN – “A simulator for single lectron transistor.” Available: http://hana.physics.sunysb.edu/set/software.
S. Datta, Quantum Transport: Atom to Transistor, Cambridge University Press, 2005.
Benjamin Pruvost, Hiroshi Mizuta, and Shunri Oda, “Voltage – Limitation - Free Compact SET Model Incorporating the Effects of Spin- Degenerate Discrete Energy States”. IEEE Silicon Nanoelectronics Workshop, pp. 51 – 52, 2007.
S. Mahapatra, V. Vaish, C. Wasshuber, K.Banerjee, and A. M. Ionescu, IEEE Trans. on Electron Devices, 51, 11, p. 1772-1782 (2004).
B. Pruvost, H. Mizuta, and S. Oda, IEEE Trans. on Nanotechnology, 6, 2, p. 218-224 (2007).
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