Model and Characteristic of a Resonant Tunneling Nanostructure

Abstract

This paper provides a brief tutorial for resonant tunneling theory and the operation of the future nanoelectronic devices using quantum effects employed in semiconductor industry for fabrication of computer devices and very high frequency oscillators. A typical model of resonant electronic transport through a double-barrier structure was developed. For each region of the system, analytic solutions to Schrodinger′s equation were obtained, and these solutions formed the basis of the simulative code written to output plots of resonant peaks based on varying barrier parameters. Resonances in transmission probability and in the electron density inside the quantum well were then considered for a number of these different parameters. As an application of the model to device physics, a brief discussion of the concepts governing resonant tunneling devices is also included, especially prospects for applications in next generation optoelectronic nanostructures such as light emitting diodes, semiconductor quantum dot lasers.