Dependence of Structural and Electrical Properties of Sputtered-Fe3O4 Thin Films on Gas Flow Rate
Corressponding author's email:
hangptk@hcmute.edu.vnDOI:
https://doi.org/10.54644/jte.72A.2022.1237Keywords:
Magnitite, Thin films, RF-magnetron sputtering, Spintronics, Verwey transitionAbstract
Magnetite (Fe3O4) is a potential material for spintronic development due to its high Curie temperature (858 K) and half-metallic structure with only one spin polarization at Fermi level. The bulk properties of Fe3O4 make it a big challenge to grow perfectly stoichiometric thin films at a low temperature. Here, we report the structural and morphological evolution of the Fe3O4 thin films as a function of gas flow rate. Radio-frequency (RF) magnetron sputtering was used to fabricate Fe3O4 thin films on the MgO/Ta/SiO2 structure at room temperature. Atomic force microscopy (AFM) shows a spherical-like shape, the root-mean-square (RMS) roughness varies from 1.5 nm to 7.5 nm, and grain size increases from 30 nm to 74.3 nm. The structural properties of Fe3O4 films are dramatically enhanced by increasing the gas flow rate. Moreover, the resistivity (r) versus temperature (T) reveals the existence of a Verwey transition below 120 K, indicating the presence of Fe3O4.
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