The study of number and thickness of ingan/algan multiple quantum well structure for 365nm - 385nm ultraviolet light-emitting diodes
Corressponding author's email:
trunghh@hcmute.edu.vnKeywords:
InGaN, AlGaN, UV LED, MQWs, wavelengthAbstract
In this paper, the authors report a study on number of layers and thickness of InGaN/AlGaN multiple quantum well (MQW) structure based ultraviolet (UV) light emitting diode (LED) heterostructures with emission at the wavelength within the range from 365nm to 385nm, which has been studied by means of SiLENSe software and drift-diffusion transport equations for electron and hole concentrations. The multiple quantum well active region in UV LED heterostructures consists of i-In0.05Ga0.95N well layers and i-Al0.22Ga0.78N barrier layers. The thickness of each In0.05Ga0.95N well layer or Al0.22Ga0.78N barrier layer of quantum well is increased from 1.0nm to 5.0nm. Based on the UV LED emission spectrums, the authors have found that emitting wavelength changed from 364nm (five pairs of MQW layers with d = 2.0nm) to 412nm (four pairs of MQW layers with d = 5.0nm). The peak wavelength of emission spectra of UV LED structure with five pairs In0.05Ga0.95N (3.0nm-thick) well layer and Al0.22Ga0.78N (3.0nm-thick) barrier layer of MQW active region was 377.5nm. Results of the studies are almost in good agreement with other experimental results.
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