The effect of carbon nanotube size on the characteristics of coaxial carbon nanotube field- effect transistors

Authors

  • Thi Luong Nguyen Ho Chi Minh City University of Technology and Education, Vietnam

Corressponding author's email:

luongnt@hcmute.edu.vn

Keywords:

CNTFET, NEGF, transistor, carbon nanotube

Abstract

The I-V characteristics of coaxial CNTFETs depend on mamy parameters such as: the metal of Source-Drain, the gate materials and the gate thickness, the size of carbon nanotube, the temperature,… In this paper, we used the non-equilibrium Green’s function (NEGF) method to simulate and present the effects of the diameter and length of the CNT on the I-V characterictics of coaxial CNTFETs.

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References

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T. Brintlinger, B.M. Kim, E. Cobas, and M. S. Fuhrer, Gate-Field-Induced Schottky Barrier Lowering in a Nanotube Field Effect Transistor, University of Maryland, College Park, MD 20742-4111, USA (2005).

Published

28-09-2010

How to Cite

[1]
T. L. Nguyen, “The effect of carbon nanotube size on the characteristics of coaxial carbon nanotube field- effect transistors”, JTE, vol. 5, no. 3, pp. 26–31, Sep. 2010.

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Research Article

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