Modelling study of 312nm ultraviolet light-emitting diodes
Corressponding author's email:
trunghh@hcmute.edu.vnKeywords:
ultraviolet, LED, AlGaN, MQW, sterilizationAbstract
The structure of Ultraviolet (UV) light-emitting diodes (LEDs) with three multi-quantum wells (MQW) of iAlyGa1-yN barrier - iAl0,20Ga0,80N well - iAlyGa1-yN barrier are studied by the SiLENSe software with various doping concentration of Mg in the iAlyGa1-yN barrier layer. The IEQ values was found to be stable with [Mg] = 5×1018cm-3. The emitting wavelength of this structure of UVLED is around 312nm for sterilization. The components of Aluminum material in the block of AlyGa1-yN barrier layer are tested at 45% and 55% to predict the decreasing of radiating wavelength below 314nm, which are in good agreement with the recent publication.
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