Some results of basic physics of single electron transistor
Corressponding author's email:
minhlh@hcmute.edu.vnKeywords:
Single electron transistor, Current-voltage characteristics, Coulomb blockage, Coulomb staircase, Coulomb oscillationAbstract
Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology, which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device; it can control the motion of the single electron. The goal of this paper is to discuss about the basic physics of the SET and focuses on simulation of basic quantum device characteristics like tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration.
Downloads: 0
References
International technology roadmap for semiconductors, 2006, http://public.itrs.net.
D. V. Averin and K. K. Likharev, Coulomb blockade of tunneling and coherent oscillations in small tunnel junctions, J. Low Temperature Physics, 62, 345-372, 1986.
T. A. Fulton and J. G. Dolan, Observation of single electron charging effects in small tunnel junctions, Physics Review Lett., 59, 109-112, 1987.
K.K. Likharev, Single electron devices and their applications, Proc. IEEE, 87, 606-632, 1999.
Y. Nakamura, C. D. Chen, and J. S. Tsai, 100 K operation of Al-based single electron transistors, Japan Journal of Applied Physics, 35, 1465-1467, 1996.
X. Tang, X. Baie, V. Bayot, F. Van de Wiele, J. P. Colinge, An SOI single electron transistor, Proceedings of Silicon on Insulator Conference, Oct. 1999, 46-47.
M. Ahlskog, R Tarkiainen, L. Roschier, and P. Hakonen, Single electron transistor made of two crossing multi-walled carbon nanotubes and its noise properties, Applied Physics Lett., 77, 4037-4039, 2000.
K. Matsumoto, M. Ishii, K Segawa, Y. Oka, B. J. Vartanian, and J.S.Harris, Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiO/Ti system, Appl. Phys. Lett. 68, 34 (1996): doi:101063/1, 116747.
J. I. Shirakashi, K. Matsumoto, N. Miura, M. Kanagai, Single electron charging effects in Nb/Nb oxide-based single electron transistor at room temperature, Applied Physics Lett. 72, No.15, 1893-1895, 1998.
Y. A. Pashkin, Y. Nakamura, and J. S. Tsai, Room-temperature Al single electron transistor made by electron beam lithography, Applied Physics Lett. 76, No. 16, 2256-2258, 2000.
J. R. Heath and M. A. Ratner, Molecular electronics, Physics Today, vol. 56, p. 43-49, 2003.
A. K. Geim and K. S. Novoselov, The rise of grapheme, Nature materials, 6, 183-191, 2007.
C. Wasshuber, Computational Electronics, New York: Springer-Verlag, (2002).
R. H. Chen, A. N. Karotkov, and K. K. Likharev, A new logic family based on single electron transistors, Proceedings of Device Res. Conf., 44-45, Charlottesville, 19-21 June 1995.
K. Uchida, R. Matsuzawa, J. Koga, R. Ohba, S. Takagi and A. Toriumi, Analytical single electron transistor (SET) model for design and analysis of realistic SET circuits, Jpn. J. Appl. Phys., 39, 2321-2324, 2000.
Hiroshi Inokawa and Yamo Takashi, A compact analytical model for asymmetrical single-electron transistors, IEEE Transactions on Electron Devices, 50, No. 2, 455-461, 2003.
S. Mahapatra, V. Vainish, C. Wasshuber, K. Banerjee, and A. M. Ionescu, Analytical modeling of single electron transistor (SET) for hybrid CMOS-SET analog IC design, IEEE Trans. Electron Devices,51, No. 11, 1772-1782, 2004.
S. Datta, Quantum Transport: Atom to Transistor, Cambridge University Press, (2005).
Dinh Sy Hien, Development of quantum device simulator, NEMO-VN2, Proceedings of fifth IEEE international symposium on electronic design, test and applications, DELTA-2010, 13-15 January 2010, Ho Chi Minh City, 170-173, 2010.
Downloads
Published
How to Cite
Issue
Section
Categories
License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
Copyright © JTE.
