Graphene nanoribbon field effect transistor for digital IC applications
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minhlh@hcmute.edu.vnTừ khóa:
Graphene nanoribbon FET, narrow band gap, on-off current ratio, Nano electronics, non-equilibrium Green’s functionTóm tắt
Graphene has been one of the most vigorously studied materials. Graphene has attracted considerable attention from the scientific community due to its excellent electronic properties. The impressive properties of graphene make it an attractive candidate for electronic devices of the future. This work explores whether graphene fulfills the promises raised by the extraordinary material properties. The opening of bandgap in grapheme) nanoribbons by quantum confinement holds promise for digital electronic device applications. We report model and device performance of low band gap grapheme nanoribbon field effect transistors (GNRFET). For the substantial current modulation at room-temperature, sub-10 nm grapheme nanoribbon widths are required. This paper also presents typical current-voltage characteristics of the GNRFET for demonstration. We have proposed a way to calculate the on-off current ratio for GNRFET having channel length of 10 nm and width of 1 nm. Scaling of channel length of GNRFET below 10 nm is observed.
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