Single molecular transistor: Modeling and simulation
Corressponding author's email:
minhhl@hcmute.edu.vnKeywords:
Single Molecular Transistor, Molecular electronics, NanoelectronicsAbstract
In this work, we introduce a model of three-terminal Single molecular transistor (SMT). The structure of the SMT is in shape like traditional MOSFET, but its conductive channel is replaced by a benzene-1,4-dithiolate molecule. SMT is a promising alternative candidate of traditional MOSFET in future due to its small size, low power and high speed. We use non-equilibrium Green’s function method to compute transport function of charges and ultimately, the current-voltage (I-V) characteristics. The program is written by using graphic user guide (GUI) in Matlab. We have found difference of I-V characteristics between MOSFET and SMT. In addition, impacts of types of material, temperature, and bias on I-V characteristics of the SMT have been considered. Using GUI in Mablab, obtained results of simulations are intuitively displayed.
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References
W. Su, First principles study of Molecular electronic devices, Royal Institute of Technology, Stockholm, Sweden, 2006.
P. S. Damle, Nanoscale device modeling: from MOSFETs to Molecules, PhD thesis, Purdue University, in USA, May 2003.
Supriyo Datta, Quantum transport: Atom to Transistor, Cambridge University Press, 2005.
M. Lundstrom and H. Pal, Nanoscale MOSFET Physics for Compact Models, Purdue University, in USA, May 2007.
S. Luryi, Quantum Capacitance Devices, Appl. Phys. Lett 52, 501, 1988.
M. Lundstrom, Simple Theory of the Ballistic Nanotransistor, Purdue University, in USA, May 2007.
PGS. TS Đinh Sỹ Hiền, Linh kiện bán dẫn, Nxb Đại học Quốc gia Tp. Hồ Chí Minh, 2008.
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